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Van der Waals epitaxy of nearly single-crystalline nitride films on amorphous graphene-glass wafer

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Van der Waals epitaxy of nearly single-crystalline nitride films on amorphous graphene-glass wafer

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Abstract

Van der Waals epitaxy provides a fertile playground for the monolithic integration of various materials for advanced electronics and optoelectronics. Here, a previously unidentified nanorod-assisted van der Waals epitaxy is developed and nearly single-crystalline GaN films are first grown on amorphous silica glass substrates using a graphene interfacial layer. The epitaxial GaN-based light-emitting diode structures, with a record internal quantum efficiency, can be readily lifted off, becoming large-size flexible devices. Without the effects of the potential field from a single-crystalline substrate, we expect this approach to be equally applicable for high-quality growth of nitrides on arbitrary substrates. Our work provides a revolutionary technology for the growth of high-quality semiconductors, thus enabling the hetero-integration of highly mismatched material systems. The heteroepitaxy of nitride semiconductors can be achieved without needing lattice matching between two material systems. The heteroepitaxy of nitride semiconductors can be achieved without needing lattice matching between two material systems.
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