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Low-Resistivity Subtractive-Etched W Lines and Highly Rel... | ResearchHub
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Low-Resistivity Subtractive-Etched W Lines and Highly Reliable High Aspect Ratio Fully Self-Aligned Vias for 3D Flash Memory
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Authors
Mitsuhiko Noda
•
Genki Sawada
10 more
•
Masaru Kito
Published
June 3, 2024
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Topics
Computer Science
Materials Science
Physics
Engineering
Optics
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DOI
10.1109/iitc61274.2024.10732736
