Hydrodynamic phenomena can be observed with light thanks to the analogy between quantum gases and nonlinear optics. In this Letter, we report an experimental study of the superfluid-like properties of light in a (1+1)-dimensional nonlinear optical mesh lattice, where the arrival time of optical pulses plays the role of a synthetic spatial dimension. A spatially narrow defect at rest is used to excite sound waves in the fluid of light and measure the sound speed. The critical velocity for superfluidity is probed by looking at the threshold in the deposited energy by a moving defect, above which the apparent superfluid behavior breaks down. Our observations establish optical mesh lattices as a promising platform to study fluids of light in novel regimes of interdisciplinary interest, including non-Hermitian and/or topological physics.
Intermetallic nanocrystals are a large family of emerging materials with extensive applications in many fields. Yet, a generalized synthetic method for intermetallic nanocrystals is lacking. Here, we report the development of a colloidal synthesis method based on amalgamation of monometallic nanocrystal seeds with low–melting point metals. We use this approach to achieve crystalline and compositionally uniform intermetallic nanocrystals of Au-Ga, Ag-Ga, Cu-Ga, Ni-Ga, Pd-Ga, Pd-In, and Pd-Zn compounds. We demonstrate both compositional tunability across the phase spaces (e.g., AuGa2, AuGa, Au7Ga2, and Ga-doped Au), size tunability (e.g., 14.0-, 7.6-, and 3.8-nm AuGa2), and size uniformity (e.g., 5.4% size deviations). This approach makes it possible to systematically achieve size- and composition-controlled intermetallic nanocrystals, opening up a multitude of possibilities for these materials. Seed amalgamation reaction unlocks a large family of intermetallic nanocrystals with excellent size and composition control. Seed amalgamation reaction unlocks a large family of intermetallic nanocrystals with excellent size and composition control.
Van der Waals epitaxy provides a fertile playground for the monolithic integration of various materials for advanced electronics and optoelectronics. Here, a previously unidentified nanorod-assisted van der Waals epitaxy is developed and nearly single-crystalline GaN films are first grown on amorphous silica glass substrates using a graphene interfacial layer. The epitaxial GaN-based light-emitting diode structures, with a record internal quantum efficiency, can be readily lifted off, becoming large-size flexible devices. Without the effects of the potential field from a single-crystalline substrate, we expect this approach to be equally applicable for high-quality growth of nitrides on arbitrary substrates. Our work provides a revolutionary technology for the growth of high-quality semiconductors, thus enabling the hetero-integration of highly mismatched material systems. The heteroepitaxy of nitride semiconductors can be achieved without needing lattice matching between two material systems. The heteroepitaxy of nitride semiconductors can be achieved without needing lattice matching between two material systems.
Bond breaking and forming are essential components of chemical reactions. Recently, the structure and formation of covalent bonds in single molecules have been studied by non-contact atomic force microscopy (AFM). Here, we report the details of a single dative bond breaking process using non-contact AFM. The dative bond between carbon monoxide and ferrous phthalocyanine was ruptured via mechanical forces applied by atomic force microscope tips; the process was quantitatively measured and characterized both experimentally and via quantum-based simulations. Our results show that the bond can be ruptured either by applying an attractive force of ~150 pN or by a repulsive force of ~220 pN with a significant contribution of shear forces, accompanied by changes of the spin state of the system. Our combined experimental and computational studies provide a deeper understanding of the chemical bond breaking process.
The densification of integrated circuits requires thermal management strategies and high thermal conductivity materials1–3. Recent innovations include the development of materials with thermal conduction anisotropy, which can remove hotspots along the fast-axis direction and provide thermal insulation along the slow axis4,5. However, most artificially engineered thermal conductors have anisotropy ratios much smaller than those seen in naturally anisotropic materials. Here we report extremely anisotropic thermal conductors based on large-area van der Waals thin films with random interlayer rotations, which produce a room-temperature thermal anisotropy ratio close to 900 in MoS2, one of the highest ever reported. This is enabled by the interlayer rotations that impede the through-plane thermal transport, while the long-range intralayer crystallinity maintains high in-plane thermal conductivity. We measure ultralow thermal conductivities in the through-plane direction for MoS2 (57 ± 3 mW m−1 K−1) and WS2 (41 ± 3 mW m−1 K−1) films, and we quantitatively explain these values using molecular dynamics simulations that reveal one-dimensional glass-like thermal transport. Conversely, the in-plane thermal conductivity in these MoS2 films is close to the single-crystal value. Covering nanofabricated gold electrodes with our anisotropic films prevents overheating of the electrodes and blocks heat from reaching the device surface. Our work establishes interlayer rotation in crystalline layered materials as a new degree of freedom for engineering-directed heat transport in solid-state systems.
In the cuprates, one-dimensional (1D) chain compounds provide a distinctive opportunity to understand the microscopic physics, owing to the availability of reliable theories. However, progress has been limited by the challenge of controllably doping these materials. We report the synthesis and spectroscopic analysis of the 1D cuprate Ba2-xSrxCuO3+δ over a wide range of hole doping. Our angle-resolved photoemission experiments reveal the doping evolution of the holon and spinon branches. We identify a prominent folding branch whose intensity fails to match predictions of the simple Hubbard model. An additional strong near-neighbor attraction, which may arise from coupling to phonons, quantitatively explains experiments for all accessible doping levels. Considering structural and quantum chemistry similarities among cuprates, this attraction may play a similarly important role in high-temperature cuprate superconductors.
Nature controls the assembly of complex architectures through self-limiting processes; however, few artificial strategies to mimic these processes have been reported to date. Here we demonstrate a system comprising two types of nanocrystal (NC), where the self-limiting assembly of one NC component controls the aggregation of the other. Our strategy uses semiconducting InP/ZnS core–shell NCs (3 nm) as effective assembly modulators and functional nanoparticle surfactants in cucurbit[n]uril-triggered aggregation of AuNCs (5–60 nm), allowing the rapid formation (within seconds) of colloidally stable hybrid aggregates. The resultant assemblies efficiently harvest light within the semiconductor substructures, inducing out-of-equilibrium electron transfer processes, which can now be simultaneously monitored through the incorporated surface-enhanced Raman spectroscopy–active plasmonic compartments. Spatial confinement of electron mediators (for example, methyl viologen (MV2+)) within the hybrids enables the direct observation of photogenerated radical species as well as molecular recognition in real time, providing experimental evidence for the formation of elusive σ–(MV+)2 dimeric species. This approach paves the way for widespread use of analogous hybrids for the long-term real-time tracking of interfacial charge transfer processes, such as the light-driven generation of radicals and catalysis with operando spectroscopies under irreversible conditions.
Voltage control of magnetic order is desirable for spintronic device applications, but 180° magnetization switching is not straightforward because electric fields do not break time-reversal symmetry. Ferrimagnets are promising candidates for 180° switching owing to a multi-sublattice configuration with opposing magnetic moments of different magnitudes. In this study we used solid-state hydrogen gating to control the ferrimagnetic order in rare earth–transition metal thin films dynamically. Electric field-induced hydrogen loading/unloading in GdCo can shift the magnetic compensation temperature by more than 100 K, which enables control of the dominant magnetic sublattice. X-ray magnetic circular dichroism measurements and ab initio calculations indicate that the magnetization control originates from the weakening of antiferromagnetic exchange coupling that reduces the magnetization of Gd more than that of Co upon hydrogenation. We observed reversible, gate voltage-induced net magnetization switching and full 180° Néel vector reversal in the absence of external magnetic fields. Furthermore, we generated ferrimagnetic spin textures, such as chiral domain walls and skyrmions, in racetrack devices through hydrogen gating. With gating times as short as 50 μs and endurance of more than 10,000 cycles, our method provides a powerful means to tune ferrimagnetic spin textures and dynamics, with broad applicability in the rapidly emerging field of ferrimagnetic spintronics.
Evaluated nuclear structure and decay data for all nuclei with mass number A=201 (201Os, 201Ir, 201Pt, 201Au, 201Hg, 201Tl, 201Pb, 201Bi, 201Po, 201At, 201Rn, 201Fr, 201Ra) are presented. All available experimental data are compiled and evaluated, and best values for level and gamma-ray energies, quantum numbers, lifetimes, gamma-ray intensities and transition probabilities, as well as other nuclear properties, are recommended. Inconsistencies and discrepancies that exist in the literature are discussed. A number of computer codes (https://wwwnds. iaea.org/public/ensdf pgm/index.htm) developed by members of the NSDD network were used during the evaluation process. For example, the reported absolute gamma-ray emission probabilities and their uncertainties in various decay data sets were determined using the GABS code. The gamma-ray transition probabilities were determined using the RULER code and the corresponding uncertainties were determined using a Monte-Carlo approach. This work supersedes the earlier evaluation by F.G. Kondev (2007Ko06), published in Nuclear Data Sheets 108, 365 (2007).
Thermoelectric materials generate electric energy from waste heat, with conversion efficiency governed by the dimensionless figure of merit, ZT. Single-crystal tin selenide (SnSe) was discovered to exhibit a high ZT of roughly 2.2–2.6 at 913 K, but more practical and deployable polycrystal versions of the same compound suffer from much poorer overall ZT, thereby thwarting prospects for cost-effective lead-free thermoelectrics. The poor polycrystal bulk performance is attributed to traces of tin oxides covering the surface of SnSe powders, which increases thermal conductivity, reduces electrical conductivity and thereby reduces ZT. Here, we report that hole-doped SnSe polycrystalline samples with reagents carefully purified and tin oxides removed exhibit an ZT of roughly 3.1 at 783 K. Its lattice thermal conductivity is ultralow at roughly 0.07 W m–1 K–1 at 783 K, lower than the single crystals. The path to ultrahigh thermoelectric performance in polycrystalline samples is the proper removal of the deleterious thermally conductive oxides from the surface of SnSe grains. These results could open an era of high-performance practical thermoelectrics from this high-performance material.